ROHM’s extensive range of power devices, including the GaN (gallium nitride), SiC (silicon carbide), and IGBT (Insulated Gate Bipolar Transistors) devices, will be discussed, along with expert application advice and insights into auxiliary power supply and driver solutions. https://fox4kc.com/business/press-releases/ein-presswire/746405347/future-electronics-to-host-webinar-on-rohms-latest-power-management-solutions/